PART |
Description |
Maker |
154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五(巴西)总裁| 7.5AI(丙
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NXP Semiconductors N.V. Bel Fuse, Inc. YEONHO Electronics Co., Ltd.
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ZXT11N15DF ZXT11N15DFTC ZXT11N15DFTA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 3000 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR SOT-23, 3 PIN 15V NPN SILICON LOW SATURATION TRANSISTOR NPN Low Sat Transistor
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Diodes, Inc. Diodes Incorporated Zetex Semiconductors
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2N1890 JAN2N1890S JAN2N1711S JANTX2N1711 |
NPN LOW POWER SILICON TRANSISTOR NPN Transistor 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5
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Microsemi Corporation MICROSEMI CORP-LAWRENCE
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UPA812T-T1 UPA812 UPA812T UPA812TGB-T1 PA812T |
Low Noise, High Frequncy Amplifer NPN Transistor(楂??浣??澹版?澶у?NPN?朵?绠? Low Noise, High Frequncy Amplifer NPN Transistor(高频低噪声放大器NPN晶体 HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD TRANSISTOR | BJT | PAIR | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-363
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NEC[NEC] NEC Corp.
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CA3096_04 CA3096 CA3096A CA3096AE CA3096AM CA3096A |
NPN/PNP Transistor Array, High Voltage, Enhanced Icbo, Iceo and Vce(sat) NPN/PNP Transistor Array, High Voltage, General Purpose, Relaxed Parameters NPN/PNP Transistor Arrays 50 mA, 35 V, 5 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, MS-012AC 50 mA, 35 V, 5 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, MS-001BB
|
INTERSIL[Intersil Corporation]
|
BFP650 |
Digital Transistors - NPN SiGe RF Transistor, high power amplifiers, low noise RF transistor in SOT343 Package, 4V, 150mA NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
KTC1027 KTC1027O KTC1027-15 |
EPITAXIAL PLANAR NPN TRANSISTOR General Purpose Transistor 800 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
KEC(Korea Electronics) Korea Electronics (KEC)
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TIP112T MJE15028A BUT56AW BUT56AA BUT56AN MOTOROLA |
2 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB 8 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-220AB 8 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB 7 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB 5 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-220AB 2.5 A, 750 V, NPN, Si, POWER TRANSISTOR, TO-220AB 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB 6 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB 1 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-220AB
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Motorola Mobility Holdings, Inc. MOTOROLA INC
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ECG105 ECG85 ECG91 ECG90 ECG92 ECG101 |
Pressure (Pa): 770 ( 3.09inchH2O / 75.1 ( 0.30inchH2O ); Noise (dB[A]): 71 / 40; Mass (g): 760; TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 400MA I(C) | TO-92 TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50MA I(C) | TO-92VAR TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-92VAR TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 15A I(C) | SIP 晶体管|晶体管| npn型| 200伏五(巴西)总裁| 15A条(c)的|园区 TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | TO-5 晶体管|晶体管|叩| 20V的五(巴西)总裁| 300mA的一(c)|
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NXP Semiconductors N.V.
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